منابع مشابه
A metamaterial solid-state terahertz phase modulator
Over the past two decades, terahertz time-domain spectroscopy1 and quantum-cascade lasers2 have been two of the most important developments in terahertz science and technology. These technologies may contribute to a multitude of terahertz applications that are currently under investigation globally3. However, the devices and components necessary to effectively manipulate terahertz radiation req...
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In this paper we propose and experimentally demonstrate arrays of graphene electro-absorption modulators as electrically reconfigurable patterns for terahertz cameras. The active element of these modulators consists of only single-atom-thick graphene, achieving a modulation of the THz wave reflectance > 50% with a potential modulation depth approaching 100%. Although the prototype presented her...
متن کاملGraphene based All-Optical Spatial Terahertz Modulator
We demonstrate an all-optical terahertz modulator based on single-layer graphene on germanium (GOG), which can be driven by a 1.55 μm CW laser with a low-level photodoping power. Both the static and dynamic THz transmission modulation experiments were carried out. A spectrally wide-band modulation of the THz transmission is obtained in a frequency range from 0.25 to 1 THz, and a modulation dept...
متن کاملHigh Speed Terahertz Modulator on the Chip Based on Tunable Terahertz Slot Waveguide
This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. ...
متن کاملHfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial∗
Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable charact...
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ژورنال
عنوان ژورنال: Nature
سال: 2006
ISSN: 0028-0836,1476-4687
DOI: 10.1038/444560a